Dose dependence of carrier and heat dynamics at an ion-implanted silicon surface measured using lens-free heterodyne transient grating method

被引：11

作者：

Katayama, K ^{[1
]}

Yamaguchi, M ^{[1
]}

Sawada, T ^{[1
]}

机构：

[1] Univ Tokyo, Grad Sch Frontier Sci, Dept Adv Mat Sci 401, Chiba 2778561, Japan

来源：

JOURNAL OF APPLIED PHYSICS | 2003年 / 94卷 / 08期

关键词：

D O I：

10.1063/1.1605255

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The lens-free heterodyne transient grating method was shown to reveal the dynamics of photoexcited carriers and heat on the surface region of an ion-implanted silicon in the dose range of 10(11)-10(15) cm(-2). In addition to the fact that the detection limit of the dose was superior to that for conventional methods, several physical properties of the carrier and heat can be obtained by analyzing transient responses. Theoretical analysis provided the lifetime of carriers and thermal diffusion coefficients in the ion-implanted surface region. (C) 2003 American Institute of Physics.

引用

页码：4904 / 4907

页数：4

共 22 条

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