Transient reflecting grating spectroscopy for defect analysis of surface region of semiconductors

被引：5

作者：

Donen, H ^{[1
]}

Katayama, K ^{[1
]}

Sawada, T ^{[1
]}

机构：

[1] Univ Tokyo, Grad Sch Frontier Sci, Dept Adv Mat Sci, Bunkyo Ku, Tokyo 1138656, Japan

来源：

JOURNAL OF APPLIED PHYSICS | 2002年 / 92卷 / 03期

关键词：

D O I：

10.1063/1.1492860

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Ultrafast transient reflecting grating (TRG) spectroscopy was applied to investigate the influence of various defect states on ultrafast carrier dynamics of up to 3 ps duration in an ion-implanted silicon surface region. The TRG spectra revealed the energy-state distribution of two kinds of defect states, and it was observed that photoexcited carriers were trapped in each state depending on annealing time. It was proposed that TRG spectroscopy can be used as an analytical method for characterizing defects in the surface region of semicondcutors. (C) 2002 American Institute of Physics.

引用

页码：1367 / 1371

页数：5

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