RuO2 thin film fabrication with plasma-enhanced chemical vapor deposition

被引：18

作者：

Park, SE ^{[1
]}

Kim, HM

Kim, KB

Min, SH

机构：

[1] Seoul Natl Univ, Div Engn & Mat Sci, Seoul 151742, South Korea

[2] Seoul Natl Univ, Res Inst Adv Mat, Seoul 151742, South Korea

来源：

THIN SOLID FILMS | 1999年 / 341卷 / 1-2期

关键词：

ruthenium; plasma-enhanced chemical vapour deposition;

D O I：

10.1016/S0040-6090(98)01523-5

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The deposition of RuO2 thin films by plasma-enhanced chemical vapor deposition (PECVD) with ruthenocene as a precursor has been investigated with various ratios of precursor/oxygen at the substrate temperature of 500 degrees C. When an Ru + RuO2 mixture was deposited by thermal CVD, RuO2 thin films of minimum resistivity of about 55 mu Omega cm were successfully deposited by PECVD under the same conditions. It is found that there is a strong tendency to RuO2 formation as the ratio of precursor/oxygen is decreased. It is concluded that nut only the amount of activated oxygen atoms but also the ratio of precursor/oxygen is important for RuO2 formation. (C) 1999 Elsevier Science S.A. All rights reserved.

引用

页码：52 / 54

页数：3

共 10 条

[1] COMPARISON OF LEAD-ZIRCONATE-TITANATE THIN-FILMS ON RUTHENIUM OXIDE AND PLATINUM-ELECTRODES [J].

BURSILL, LA ;

REANEY, IM ;

VIJAY, DP ;

DESU, SB .

JOURNAL OF APPLIED PHYSICS, 1994, 75 (03) :1521-1525

[2] CHEMICAL VAPOR-DEPOSITION OF RUTHENIUM AND RUTHENIUM DIOXIDE FILMS [J].

GREEN, ML ;

GROSS, ME ;

PAPA, LE ;

SCHNOES, KJ ;

BRASEN, D .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1985, 132 (11) :2677-2685

[3] SPECTROSCOPIC ELLIPSOMETRY OF RUO2 FILMS PREPARED BY METALORGANIC CHEMICAL-VAPOR-DEPOSITION [J].

HONES, P ;

GERFIN, T ;

GRATZEL, M .

APPLIED PHYSICS LETTERS, 1995, 67 (21) :3078-3080

[4] REACTIVELY SPUTTERED RUO2 THIN-FILM RESISTOR WITH NEAR ZERO TEMPERATURE-COEFFICIENT OF RESISTANCE [J].

JIA, QX ;

SHI, ZQ ;

JIAO, KL ;

ANDERSON, WA ;

COLLINS, FM .

THIN SOLID FILMS, 1991, 196 (01) :29-34

[5] (Ba, Sr)TiO3 films prepared by liquid source chemical vapor deposition on Ru electrodes [J].

Kawahara, T ;

Yamamuka, M ;

Yuuki, A ;

Ono, K .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1996, 35 (9B) :4880-4885

[6] Achievement of zero temperature coefficient of resistance with RuOx thin film resistors [J].

Kim, YT .

APPLIED PHYSICS LETTERS, 1997, 70 (02) :209-211

[7] CHARACTERIZATION OF REACTIVELY SPUTTERED RUTHENIUM DIOXIDE FOR VERY LARGE-SCALE INTEGRATED METALLIZATION [J].

KRUSINELBAUM, L ;

WITTMER, M ;

YEE, DS .

APPLIED PHYSICS LETTERS, 1987, 50 (26) :1879-1881

[8] Characterization of RuO2 thin films prepared by hot-wall metallorganic chemical vapor deposition [J].

Shin, WC ;

Yoon, SG .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1997, 144 (03) :1055-1060

[9] RUO2 FILMS BY METAL-ORGANIC CHEMICAL-VAPOR-DEPOSITION [J].

SI, J ;

DESU, SB .

JOURNAL OF MATERIALS RESEARCH, 1993, 8 (10) :2644-2648

[10] RUO2 THIN-FILMS AS BOTTOM ELECTRODES FOR HIGH DIELECTRIC-CONSTANT MATERIALS [J].

YOSHIKAWA, K ;

KIMURA, T ;

NOSHIRO, H ;

OTANI, S ;

YAMADA, M ;

FURUMURA, Y .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1994, 33 (6B) :L867-L869

← 1 →