Subsurface dimerization in III-V semiconductor (001) surfaces

被引：111

作者：

Kumpf, C

Marks, LD

Ellis, D

Smilgies, D

Landemark, E

Nielsen, M

Feidenhans, R

Zegenhagen, J

Bunk, O

Zeysing, JH

Su, Y

Johnson, RL

机构：

[1] Northwestern Univ, Dept Mat Sci & Engn, Evanston, IL 60208 USA

[2] Northwestern Univ, Dept Chem, Evanston, IL 60208 USA

[3] European Synchrotron Radiat Facil, F-38043 Grenoble, France

[4] Univ Hamburg, Inst Expt Phys 2, D-22761 Hamburg, Germany

[5] Riso Natl Lab, Condensed Matter Phys & Chem Dept, DK-4000 Roskilde, Denmark

来源：

PHYSICAL REVIEW LETTERS | 2001年 / 86卷 / 16期

关键词：

D O I：

10.1103/PhysRevLett.86.3586

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

We present the atomic structure of the c(8 X 2) reconstructions of InSb-, InAs-, and GaAs-(001) surfaces as determined by surface x-ray diffraction using direct methods. Contrary to common belief, group III dimers are not prominent on the surface, instead subsurface dimerization of group m atoms takes place in the second bilayer, accompanied by a major rearrangement of the surface atoms above the dimers to form linear arrays. By varying the occupancies of four surface sites the (001)-c(8 X 2) reconstructions of III-V semiconductors can be described in a unified model.

引用

页码：3586 / 3589

页数：4

共 40 条

[1] SURFACE RECONSTRUCTIONS OF GAAS(100) OBSERVED BY SCANNING TUNNELING MICROSCOPY [J].