Effect of freon flow rate on tin oxide thin films deposited by chemical vapor deposition

被引:42
作者
Fang, TH
Chang, WJ [1 ]
机构
[1] Kun Shan Univ Technol, Dept Mech Engn, Tainan 710, Taiwan
[2] So Taiwan Univ technol, Dept Mech Engn, Tainan 710, Taiwan
关键词
freon; chemical vapor deposition; thin films; tin oxide; x-ray diffraction;
D O I
10.1016/S0169-4332(03)00817-1
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
High quality fluorine-doped tin oxide (SnO2:F) films on glass substrates were been prepared using chemical vapor deposition (CVD) method. The electrical properties, surface morphologies, structural properties and optical properties of the films were studied by varying the freon flow rates. The structure was analyzed by X-ray diffraction (XRD). Scanning electron microscopy (SEM) and atomic force microscopy (AFM) were used to study the morphology. Energy-dispersive spectroscopy (EDS) was conducted to understand the surface fluorine composition of the film. The results showed that crystalline structure of the film had a have cassiterite-like diffraction patterns with a preferred orientation of (1 1 0). Surface roughness was evaluated by atomic force microscopy. characterized by root mean square (RMS) and average value (Ra). The SnO2:F resistivity decreased as the freon flow rate increased. The films had a uniform thickness and a transmittance of 80-90% within the visible region of the spectrum. (C) 2003 Elsevier B.V. All rights reserved.
引用
收藏
页码:175 / 180
页数:6
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