Homoepitaxial growth of ZnO films on ZnO (11(2)over-bar0) substrates

被引：10

作者：

Kashiwaba, Y

Kato, H

Kikuchi, T

Niikura, I

Matsushita, K

Kashiwaba, Y

机构：

[1] Sendai Natl Coll Technol, Aoba Ku, Sendai, Miyagi 9893128, Japan

[2] Iwate Univ, Morioka, Iwate 0208551, Japan

[3] Iwate Ind Res Inst, Morioka, Iwate 0200852, Japan

[4] Tokyo Denpa Co Ltd, Ohta Ku, Tokyo 1430024, Japan

[5] Yamagata Univ, Yonezawa, Yamagata 9928510, Japan

来源：

APPLIED SURFACE SCIENCE | 2005年 / 244卷 / 1-4期

关键词：

ZnO; homoepitaxial growth; X-ray diffraction; MOCVD; photoluminescence;

D O I：

10.1016/j.apsusc.2004.09.147

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Homoepitaxial growth of ZnO (11 (2) over bar0) films was achieved on single crystal ZnO (I VTO) substrates by metal-organic chemical vapor deposition. The full width at half-maximum of grazing incidence diffraction measurement of film with thickness of 0.95 mu m was smaller than that of a single crystal ZnO substrate. The surface roughness was increased from 1.7 to 37.8 nm with increase in thickness from 0.16 to 0.95 mu m. In the room temperature photoluminescence spectrum of a homoepitaxial film with thickness of 0.95 mu m, the intensity of green emission due to intrinsic defects was weak and the band-edge emission due to free exciton emission was dominantly observed at 3.284 eV. (c) 2004 Elsevier B.V. All rights reserved.

引用

收藏

页码：373 / 376

页数：4

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