High-temperature quenching of electrical resistance in graphene interconnects

被引：223

作者：

Shao, Q.

Liu, G.

Teweldebrhan, D.

Balandin, A. A. ^{[1
]}

机构：

[1] Univ Calif Riverside, Nanodevice Lab, Dept Elect Engn, Riverside, CA 92521 USA

[2] Univ Calif Riverside, Mat Sci & Engn Program, Bourns Coll Engn, Riverside, CA 92521 USA

来源：

APPLIED PHYSICS LETTERS | 2008年 / 92卷 / 20期

关键词：

D O I：

10.1063/1.2927371

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The authors reported on the experimental investigation of the high-temperature electrical resistance of graphene. The test structures were fabricated by using the focused ion beam from the single and bilayer graphene produced by mechanical exfoliation. It was found that as temperature increases from 300 to 500 K, the resistance of the single, and bilayer graphene interconnects drops down by 30% and 70%, respectively. The quenching and temperature dependence of the resistance were explained by the thermal generation of the electron-hole pairs and carrier scattering by acoustic phonons. The obtained results are important for the proposed graphene interconnect applications in integrated circuits. (C) 2008 American Institute of Physics.

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