Ion-beam-induced chemical-vapor deposition of FePt and CoPt particles

被引：23

作者：

Xu, QY ^{[1
]}

Kageyama, Y ^{[1
]}

Suzuki, T ^{[1
]}

机构：

[1] Toyota Technol Inst, Informat Storage Mat Lab, Tempaku Ku, Nagoya, Aichi 4688511, Japan

来源：

JOURNAL OF APPLIED PHYSICS | 2005年 / 97卷 / 10期

关键词：

D O I：

10.1063/1.1851875

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

FePt and CoPt particles have been directly deposited on Si3N4 substrate by ion-beam-induced chemical-vapor deposition (IBICVD) with a focused ion-beam system. The as-deposited FePt particles are amorphous and crystallize into fcc structure after annealing at 600 degrees C. The as-deposited CoPt particles and the CoPt particles annealed at 600 degrees C are both in fcc structure, but annealing improves the crystallization of the CoPt particles. After applying a 20-kOe magnetic field perpendicular to the Si3N4 substrate, the magnetic force microscopy images of annealed FePt and CoPt particles both show concentric domain patterns, implying the alternately up- and downward perpendicular components of magnetizations. The successful fabrication of FePt and CoPt particles may lead to the potential application of IBICVD for nanoparticles and clusters which have not been synthesized yet. (c) 2005 American Institute of Physics.

引用

页数：3

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