Characterization of ZnO:Al/Au/ZnO:Al trilayers for high performance transparent conducting electrodes

被引：58

作者：

Dimopoulos, T. ^{[1
]}

Radnoczi, G. Z. ^{[2
]}

Pecz, B. ^{[2
]}

Brueckl, H. ^{[1
]}

机构：

[1] Austrian Inst Technol GmbH AIT, Hlth & Environm Dept, A-1220 Vienna, Austria

[2] Hungarian Acad Sci, Res Inst Tech Phys & Mat Sci MFA, H-1121 Budapest, Hungary

来源：

THIN SOLID FILMS | 2010年 / 519卷 / 04期

关键词：

Transparent conducting oxides; Solar cells; Sputtering; Metal-doped zinc oxide; Optical constant; Atomic force microscopy; Transmission electron microscopy; MULTILAYER FILMS; ELECTRICAL-PROPERTIES; OPTICAL-PROPERTIES; THIN-FILMS; ZNO FILMS; AL; CU; THICKNESS; AG;

D O I：

10.1016/j.tsf.2010.09.049

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Symmetric ZnO:Al/Au/ZnO:Al trilayers were sputter-deposited and characterized for transparent conducting electrodes, varying the thickness of the ZnO:Al (AZO) and Au layers. The optical transmission for normal light incidence is optimum for an AZO thickness of 50 nm, due to the suppression of reflection. In this case, the transmittance is more than 0.7 for wavelengths above 400 nm and for a Au thickness of 5 nm. At the same time, the sheet resistance is approx. 300 Omega which can be decreased to 12 Omega with the increase of the Au thickness to 9 nm. This is achieved with a moderate loss in the optical transmission. The figure of merit for transparent conducting electrodes, as introduced by G. Haacke (J. Appl. Phys. 47 (1976) 4086) yields values from 29.4 x 10(-3) to 6.9 x 10-(3) Omega(-1), depending on the Au thickness and the considered wavelength range. (C) 2010 Elsevier B.V. All rights reserved.

引用

页码：1470 / 1474

页数：5

共 17 条

[1] ITO/Ag/ITO multilayer films for the application of a very low resistance transparent electrode [J].