Improved optical and electrical properties of rf sputtered Al doped ZnO films on polymer substrates by low-damage processes

被引：11

作者：

Min, Hyung Seob ^{[1
]}

Yang, Min Kyu ^{[1
]}

Lee, Jeon-Kook ^{[1
]}

机构：

[1] Korea Inst Sci & Technol, Mat Sci & Technol Res Div, Seoul 136791, South Korea

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A | 2009年 / 27卷 / 02期

关键词：

aluminium; electrical resistivity; II-VI semiconductors; semiconductor growth; semiconductor thin films; sputter deposition; visible spectra; wide band gap semiconductors; zinc compounds; THIN-FILM; TRANSPARENT;

D O I：

10.1116/1.3081966

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Three types of low-damage radio-frequency (rf) magnetron sputtering processes-an interruptive process, a rotating cylindrical holder method, and an off-axis sputtering method-were designed and studied to reduce the film surface temperature during deposition. Low-damage sputtering processes were investigated to improve the resistivity and optical transmittance in the visible range of Al doped ZnO (AZO) thin films deposited on polymer substrates. In the case of the polyethersulfone substrate, AZO films with a resistivity of 1.0x10(-3) Omega cm and an optical transmittance of 75% were obtained by the rotating repeat holder method during rf sputtering.

引用

页码：352 / 355

页数：4

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