Preparation of transparent conducting ZnO:Al films on polymer substrates by r. f. magnetron sputtering

被引:161
作者
Zhang, DH [1 ]
Yang, TL
Ma, J
Wang, QP
Gao, RW
Ma, HL
机构
[1] Shandong Univ, Dept Phys, Jinan 250100, Peoples R China
[2] Inst Zibo, Shandong 255091, Peoples R China
[3] Shandong Univ, Inst Optoelect Mat & Devices, Jinan 250100, Peoples R China
基金
中国国家自然科学基金;
关键词
ZnO : Al; polymer substrate; sputtering; transparent conducting films;
D O I
10.1016/S0169-4332(99)00591-7
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Highly transparent conducting Al-doped ZnO films with good adherence and low resistivity have been prepared on polymer substrates by r. f. magnetron sputtering. Mechanically stable polycrystalline conducting ZnO:Al films having a preferred orientation with the (002) planes parallel to the substrates were deposited on polyisocyanate (PI) substrate with resistivities in the range of 4.1 X 10(-3) to 5.110(-4) Omega cm, with carrier densities more than 2.6 X 10(20) cm(-3) and Hall mobilities between 5.78 and 13.11 cm(2) V-1 s(-1). The average transmittance exceeded 80% for a 440 nm thick film deposited on polypropylene adipate (PPA) substrate in the visible spectrum. The quality of obtained films depended on substrate temperatures, sputtering power, Ar pressures and compositions of used targets during film fabrication. (C) 2000 Elsevier Science B.V. All rights reserved.
引用
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页码:43 / 48
页数:6
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