ITO/metal/ITO multilayer structures based on Ag and Cu metal films for high-performance transparent electrodes

被引:153
作者
Guillen, C. [1 ]
Herrero, J. [1 ]
机构
[1] CIEMAT, Dept Energia, E-28040 Madrid, Spain
关键词
transparent conductive oxide; metal; multilayer; optical properties; electrical resistivity;
D O I
10.1016/j.solmat.2008.02.038
中图分类号
TE [石油、天然气工业]; TK [能源与动力工程];
学科分类号
0807 ; 0820 ;
摘要
Transparent conductive indium tin oxide (ITO)/metal/ITO multilayer electrodes have been prepared by sputtering at room temperature. Ag and Cu thin films with thickness ranging from 5 to 35 nm have been used as intermediate metal layer, between ITO coatings of about 30nm thickness. Evolution of the optical and electrical characteristics of the multilayers as a function of each metal film thickness has been analyzed. High-quality transparent electrodes have been obtained, with sheet resistance below 6 Omega/sq for Ag film thickness above 10nm or Cu film thickness above 16nm. These multilayers also showed high transmittance in the visible spectral range, above 90% by discounting the glass substrate, with a maximum that is located at lower wavelength for Ag-based electrodes than for the Cu-based ones. After heating at 350 degrees C in flowing nitrogen, some improvement in the optoelectronical characteristics of the multilayer electrodes has been achieved that is related to the structural improvement of the ITO components. (c) 2008 Elsevier B.V. All rights reserved.
引用
收藏
页码:938 / 941
页数:4
相关论文
共 30 条
[1]   Transparent conductive film having sandwich structure of gallium-indium-oxide/silver/gallium-indium-oxide [J].
Abe, Yoshiyuki ;
Nakayama, Tokuyuki .
MATERIALS LETTERS, 2007, 61 (18) :3897-3900
[2]   The effects of grain boundary scattering on the electrical resistivity of single-layered silver and double-layered silver/chromium thin films [J].
Artunc, N. ;
Bilge, M. D. ;
Utlu, G. .
SURFACE & COATINGS TECHNOLOGY, 2007, 201 (19-20) :8377-8381
[3]   RF sputtering deposition of Ag/ITO coatings at room temperature [J].
Bertran, E ;
Corbella, C ;
Vives, M ;
Pinyol, A ;
Person, C ;
Porqueras, I .
SOLID STATE IONICS, 2003, 165 (1-4) :139-148
[4]   Thin films engineering of indium tin oxide:: Large area flat panel displays application [J].
Betz, U ;
Olsson, MK ;
Marthy, J ;
Escolá, MF ;
Atamny, F .
SURFACE & COATINGS TECHNOLOGY, 2006, 200 (20-21) :5751-5759
[5]   Surface and grain boundary contributions in the electrical resistivity of metallic nanofilms [J].
Camacho, Juan M. ;
Oliva, A. I. .
THIN SOLID FILMS, 2006, 515 (04) :1881-1885
[6]   Effect of substrate temperature on electrical, structural, optical and cathodoluminescent properties of In2O3-Sn thin films prepared by spray pyrolysis [J].
El Hichou, A ;
Kachouane, A ;
Bubendorff, JL ;
Addou, M ;
Ebothe, J ;
Troyon, M ;
Bougrine, A .
THIN SOLID FILMS, 2004, 458 (1-2) :263-268
[7]   Mobility of conduction electrons in ultrathin Fe and Cu films on Si(111) [J].
Fedorov, D. V. ;
Fahsold, G. ;
Pucci, A. ;
Zahn, P. ;
Mertig, I. .
PHYSICAL REVIEW B, 2007, 75 (24)
[8]   Transparent conductors as solar energy materials: A panoramic review [J].
Granqvist, Claes G. .
SOLAR ENERGY MATERIALS AND SOLAR CELLS, 2007, 91 (17) :1529-1598
[9]   Structure, optical, and electrical properties of indium tin oxide thin films prepared by sputtering at room temperature and annealed in air or nitrogen [J].
Guillen, C. ;
Herrero, J. .
JOURNAL OF APPLIED PHYSICS, 2007, 101 (07)
[10]   Polycrystalline growth and recrystallization processes in sputtered ITO thin films [J].
Guillén, C ;
Herrero, J .
THIN SOLID FILMS, 2006, 510 (1-2) :260-264