Influence of grain sizes on the mobility of organic thin-film transistors

被引：165

作者：

Di Carlo, A

Piacenza, F

Bolognesi, A

Stadlober, B

Maresch, H

机构：

[1] Univ Roma Tor Vergata, INFM, Dept Elect Engn, I-00133 Rome, Italy

[2] RAPTECH Srl, I-00173 Rome, Italy

[3] Joanneum Res, Inst Nanostruct Mat & Photon, A-8160 Weiz, Austria

来源：

APPLIED PHYSICS LETTERS | 2005年 / 86卷 / 26期

关键词：

D O I：

10.1063/1.1954901

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A mobility model for organic thin-film transistors (OTFTs) has been considered that fully accounts for the effect of grains and grain boundaries of the organic layer. The model has been applied to a top contact pentacene OTFT. Comparison between simulation results and experimental data shows a strong dependence of mobility as a function of grain size. The field-effect-extracted mobility is not linearly related to the grain size, but presents a rather abrupt reduction for a grain size smaller than 2 mu m. (c) 2005 American Institute of Physics.

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页码：1 / 3

页数：3

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