Intrinsic dielectric breakdown of ultra-thin gate oxides

被引：16

作者：

Lombardo, S ^{[1
]}

机构：

[1] IMETEM, CNR, I-95121 Catania, Italy

来源：

MICROELECTRONIC ENGINEERING | 2001年 / 59卷 / 1-4期

关键词：

intrinsic dielectric break-down; ultra-thin gate oxides; reliability; breakdown damage;

D O I：

10.1016/S0167-9317(01)00632-3

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We have investigated the dynamics of intrinsic dielectric breakdown (BID) in SiO2 thin films of thickness in the range from 35 to 3 nm. BID is obtained under constant voltage Fowler-Nordheim stress at fields between 10 and 12.5 MV/cm. As a function of oxide thickness we have followed with high time resolution the dynamics of the BD transient and analysed the post-BD damage by using transmission electron microscopy, photon emission microscopy and measurements of the post-BD current-voltage (I-V) characteristics. Moreover, the effect of the density of electrons at the cathode on the resulting BD damage is put in evidence. The data are interpreted and discussed in the framework of a model. (C) 2001 Elsevier Science B.V. All rights reserved.

引用

页码：33 / 42

页数：10

共 13 条

[1]

ALAM MA, 2000, IEDM

[2]

Datta S., 1995, Electronic Transport in Mesoscopic Systems

[3] Reliability: a possible showstopper for oxide thickness scaling? [J].