Development of evaluation method for organic contamination on silicon wafer surfaces

被引:23
作者
Ishiwari, S [1 ]
Kato, H
Habuka, H
机构
[1] Hitachi Plant Engn & Construct Co Ltd, Toshima Ku, Tokyo 1708466, Japan
[2] Hitachi Ltd, Device Dev Ctr, Tokyo 1988512, Japan
[3] Yokohama Natl Univ, Dept Chem Engn Sci, Kanagawa 2408501, Japan
关键词
D O I
10.1149/1.1408635
中图分类号
O646 [电化学、电解、磁化学];
学科分类号
081704 [应用化学];
摘要
A method, called the silicon plate method, has been developed using a small sampling device with a clean simple process, in order to directly evaluate organic contamination on a silicon wafer surface that came from the cleanroom air. Using this method, the concentration of bis(2-ethylhexyl)phthalate on the silicon wafer surface is experimentally shown, for the first time, to reach a steady state which has a relationship with its concentration in the cleanroom air. The experimental results are consistent with those theoretically predicted using the model of multicomponent organic species adsorption-induced contamination; therefore, the silicon plate method is concluded to be effective for evaluating the time-dependent behavior of organic species on the silicon wafer surface. (C) 2001 The Electrochemical Society.
引用
收藏
页码:G644 / G648
页数:5
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