Characteristics of IZSO films deposited by a co-sputtering system

In-Zn-Sn-O films were deposited on a polycarbonate (PC) substrate by a magnetron co-sputtering system using two cathodes (DC, RF) without substrate heating. Two types of ITO targets (target A: doped with 5 wt.% SnO2, target B: doped with 10 wt.% SnO2) were used as an In-Sn-O source. The ITO and ZnO targets were sputtered by DC and RF discharges, respectively, and the composition of the In-Zn-Sn-O films was controlled via the power ratio of each cathode. In the case of ITO target A, the lowest resistivity (4.3 x 10(-4) Omega cm) was obtained for the film deposited at the RF power (ZnO) of 55W. In the case of ITO target B, the lowest resistivity (2.9 x 10(-4) Omega cm) of the film was obtained at the RF power (ZnO) of 30W, which was attributed to the increase in carrier density. Hall mobility decreased with increasing carrier density, which could be explained by the increase in ionized impurity scattering.