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CuInS2-TiO2 heterojunctions solar cells obtained by atomic layer deposition

被引：45
作者：
Nanu, M
Reijnen, L
Meester, B
Goossens, A
Schoonman, J
机构：
[1] Delft Univ Technol, Inorgan Chem Lab, Fac Sci Appl, NL-2628 BL Delft, Netherlands
[2] Transilvania Univ Brasov, Dept Chem, Fac Mat Sci & Engn, Brasov 2200, Romania
来源：
THIN SOLID FILMS | 2003年 / 431卷
关键词：
atomic layer chemical vapor deposition; copper indium disulfide; thin films; defect chemistry;
D O I：
10.1016/S0040-6090(03)00230-X
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Chalcopyrites are being studied widely as a promising absorber material for high-efficiency, low-cost, thin-film solar cells. The present paper deals with the growth of CuInS2 thin films by atomic layer deposition. CuInS2 films are grown on glass, F-doped SnO2 coated glass, and TiO2 thin films at a pressure of 2 mbar and in the temperature range of 350-500degreesC using CuCl, InCl3 and H2S as precursors. The influence of the process conditions on the structural and the electrical properties is examined. The growth temperature, the purge time and the vapor pressure of the precursors are found to be the decisive parameters. The composition of the thin films is investigated with X-ray diffraction and Raman spectroscopy Depending on the process conditions single phase CuInS2 or a mix of CuxS, CuInS2 and CuIn5S8 are formed. The effect of annealing the CuInS2 films in an H2S or O-2 atmosphere is studied as well. (C) 2003 Elsevier Science B.V. All rights reserved.
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收藏
页码：492 / 496
页数：5
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