9,10-ter-anthrylene-ethynylene: a new molecular architecture for solution processed anthracene-based thin film transistors

被引:36
作者
Dell'Aquila, Antonio [1 ]
Marinelli, Francesco [2 ]
Tey, Junie [3 ]
Keg, Peisi [3 ]
Lam, Yeng-Ming [3 ]
Kapitanchuk, Oleksiy L. [3 ]
Mastrorilli, Piero [1 ]
Nobile, Cosimo F. [1 ]
Cosma, Pinalysa [2 ]
Marchenko, Alexandr [4 ]
Fichou, Denis [4 ]
Mhaisalkar, Subodh G. [3 ]
Suranna, Gian Paolo [1 ]
Torsi, Luisa [2 ]
机构
[1] Polytech Bari, Dept Water Engn & Chem, Bari, Italy
[2] Univ Bari, Dept Chem, Bari, Italy
[3] Nanyang Technol Univ, Sch Mat Sci & Engn, Singapore, Singapore
[4] CEA Saclay, Organ Nanostruct & Semicond Lab, CNRS CEA UPMC, SPCSI, F-91191 Gif Sur Yvette, France
关键词
D O I
10.1039/b714865h
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
This study deals with the properties of a new molecular architecture for organic thin film transistors obtained by introducing 10-decylanthr-9-yl-ethynyl moieties at the anthracene 9,10 positions. The resulting structure, formally a ter-anthrylene-ethynylene (D3ANT), is stable and endowed with sufficient solubility to guarantee the formation of good quality films. The molecule was characterised by H-1 NMR, mass spectrometry, IR, UV-vis and photoluminescence both in solution and in the solid state. Cyclic voltammetry measurements, combined with solution UV-vis, permitted the evaluation of HOMO and LUMO energy levels. A series of D3ANT-based OTFT devices were built both in bottom and top contact configurations by a spin coating technique. Top contact OTFT devices exhibited the best semiconducting characteristics, showing an average mobility of 1.2 x 10(-2) cm(2) V-1 s(-1) with on-off ratios higher then 10(4), while the highest mobility obtained was 0.055 cm(2) V-1 s(-1). AFM thin-film characterization showed evidence of a granular structure. High-resolution STM images of D3ANT monolayers adsorbed on Au(111) and HOPG reveal highly-ordered self-organized domains with molecules lying flat on the substrates, but, remarkably, no reflections were recorded by out-of plane GIXRD of spin coated films on SiO2.
引用
收藏
页码:786 / 791
页数:6
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