Relationships between surface character and electrochemical processes on diamond electrodes: dual roles of surface termination and near-surface hydrogen

被引:81
作者
Tryk, DA [1 ]
Tsunozaki, K [1 ]
Rao, TN [1 ]
Fujishima, A [1 ]
机构
[1] Univ Tokyo, Sch Engn, Dept Appl Chem, Bunkyo Ku, Tokyo 1138656, Japan
关键词
semiconducting diamond; electrochemistry; surface termination;
D O I
10.1016/S0925-9635(01)00453-8
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The electrochemical behavior of as-deposited, electrochemically oxidized and oxygen plasma-treated semiconducting polycrystalline diamond films was examined. The AD surface was much more active than the oxidized surfaces for solvent discharge reactions (H-2 and O-2 evolution) as well as for electron transfer involving the ferro/ferricyanide couple. The capacitance as a function of potential was used to calculate acceptor concentration profiles, which showed an enriched layer of approximately 15 nm in depth for the as-deposited surface, possibly due to loosely bound hydrogen. These additional carriers appear to enhance electron transfer rates. (C) 2001 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:1804 / 1809
页数:6
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