Relationships between surface character and electrochemical processes on diamond electrodes: dual roles of surface termination and near-surface hydrogen

被引：81

作者：

Tryk, DA ^{[1
]}

Tsunozaki, K ^{[1
]}

Rao, TN ^{[1
]}

Fujishima, A ^{[1
]}

机构：

[1] Univ Tokyo, Sch Engn, Dept Appl Chem, Bunkyo Ku, Tokyo 1138656, Japan

来源：

关键词：

semiconducting diamond; electrochemistry; surface termination;

D O I：

10.1016/S0925-9635(01)00453-8

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The electrochemical behavior of as-deposited, electrochemically oxidized and oxygen plasma-treated semiconducting polycrystalline diamond films was examined. The AD surface was much more active than the oxidized surfaces for solvent discharge reactions (H-2 and O-2 evolution) as well as for electron transfer involving the ferro/ferricyanide couple. The capacitance as a function of potential was used to calculate acceptor concentration profiles, which showed an enriched layer of approximately 15 nm in depth for the as-deposited surface, possibly due to loosely bound hydrogen. These additional carriers appear to enhance electron transfer rates. (C) 2001 Elsevier Science B.V. All rights reserved.

引用

页码：1804 / 1809

页数：6

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