Direct current heating induced giant step bunching and wandering an Si(111) and (001) vicinal surfaces

被引：43

作者：

Degawa, M ^{[1
]}

Nishimura, H ^{[1
]}

Tanishiro, Y ^{[1
]}

Minoda, H ^{[1
]}

Yagi, K ^{[1
]}

机构：

[1] Tokyo Inst Technol, Dept Phys, Tokyo 1528551, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1999年 / 38卷 / 3B期

关键词：

direct current heating; surface electromigration; step bunching; step wandering; Si(111) vicinal surfaces; Si(001) vicinal surfaces;

D O I：

10.1143/JJAP.38.L308

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Direct current (DC) heating induced giant step bunching and wandering on Si(111) and (001) vicinal Surfaces were newly found. The step bunching and wandering are so large that they can easily be studied by optical microscopy. Temperature dependence of the DC heating effects and the dependence of such effects on the crystallographic direction of the current were studied.

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收藏

页码：L308 / L311

页数：4

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