Submicron processing of InAs based quantum wells: A new, highly selective wet etchant for AlSb

被引：14

作者：

Morpurgo, AF

vanWees, BJ

Klapwijk, TM

Borghs, G

机构：

[1] UNIV GRONINGEN,CTR MAT SCI,NL-9747 AG GRONINGEN,NETHERLANDS

[2] INTERUNIV MICROELECT CTR,B-3030 LOUVAIN,BELGIUM

来源：

APPLIED PHYSICS LETTERS | 1997年 / 70卷 / 11期

关键词：

D O I：

10.1063/1.118599

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We describe a processing technology for patterning InAs/AlSb heterostructures far in the submicron regime. The processing is based on a new, highly selective wet etchant for AlSb. We discuss the electrical characterization of narrow ballistic channels (down to approximate to 140 nm width) realized with present technology, and demonstrate that the processing preserves the high mobility of the material. (C) 1997 American Institute of Physics.

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页码：1435 / 1437

页数：3

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