MICROWAVE PERFORMANCE OF A DIGITAL ALLOY BARRIER AL(SB,AS)/ALSB/INAS HETEROSTRUCTURE FIELD-EFFECT TRANSISTOR

被引:33
作者
BOLOGNESI, CR
WERKING, JD
CAINE, EJ
KROEMER, H
HU, EL
机构
[1] Department of Electrical and Computer Engineering, University of California, Santa Barbara, CA
基金
加拿大自然科学与工程研究理事会;
关键词
D O I
10.1109/55.215085
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
We demonstrate high-speed, digital alloy barrier-based, Al(Sb,As)/AlSb/InAs heterostructure field-effect transistors (HFET's) fabricated using a standard mesa process. Current gain cutoff frequencies f(T) of 38.5 GHz were extracted from the measured scattering parameters for devices with a 0.6-mum gate length and a 3-mum source-to-drain separation. A significant output conductance depressed f(max) to 40 GHz. The results demonstrate the feasibility and potential of InAs/AlSb-based HFET's for high-speed electronics applications.
引用
收藏
页码:13 / 15
页数:3
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