Experimental studies of single-event gate rupture and burnout in vertical power MOSFET's

被引：106

作者：

Titus, JL

Wheatley, CF

机构：

[1] NSWC

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 1996年 / 43卷 / 02期

关键词：

D O I：

10.1109/23.490899

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Numerous studies have revealed that vertical power MOSFET's are susceptible to single-event burnout (SEB) and single-event gate rupture (SEGR), resulting in degraded performance or even catastrophic failure when operated in a cosmic-ray environment like space. This paper summarizes many of those experimental studies and examines the problems, test methodologies, and experimental results. Previously unavailable information on SEGR is also provided.

引用

收藏

页码：533 / 545

页数：13

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