EVALUATION OF SEGR THRESHOLD IN POWER MOSFETS

被引：47

作者：

ALLENSPACH, M

BREWS, JR

MOURET, I

SCHRIMPF, RD

GALLOWAY, KF

机构：

[1] Electrical and Computer Engineering Department, The University of Arizona, Tucson, Arizona

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 1994年 / 41卷 / 06期

关键词：

MOSFET devices;

D O I：

10.1109/23.340557

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Bias values, determined experimentally to result in single-event gate rupture (SEGR) in power metal oxide semiconductor field effect transistors (MOSFETs), are used in 2-D device simulations, incorporating the experimental geometry. The simulations indicate that very short time oxide field transients occur for ion strikes when V-DS not equal OV. These transients can affect SEGR through hole trapping and redistribution in the oxide.

引用

页码：2160 / 2166

页数：7

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