High-performance solution-processed polymer space-charge-limited transistor

被引：22

作者：

Chao, Yu-Chiang ^{[1
]}

Meng, Hsin-Fei ^{[1
]}

Horng, Sheng-Fu ^{[2
]}

Hsu, Chain-Shu ^{[3
]}

机构：

[1] Natl Chiao Tung Univ, Inst Phys, Hsinchu 300, Taiwan

[2] Natl Tsing Hua Univ, Dept Elect Engn, Hsinchu 300, Taiwan

[3] Natl Chiao Tung Univ, Dept Appl Chem, Hsinchu 300, Taiwan

来源：

ORGANIC ELECTRONICS | 2008年 / 9卷 / 03期

关键词：

space-charge-limited current; vertical transistor;

D O I：

10.1016/j.orgel.2007.11.012

中图分类号：

T [工业技术];

学科分类号：

08 [工学];

摘要：

We demonstrate a polymer non-field-effect transistor in a vertical architecture with an Al grid embedded in a polymer sandwiched between another two electrodes. The Al grid containing high density of self-assembled submicron openings is fabricated by a non-lithography method. This device modulates the space-charge-limited current of a unipolar polymer diode with the Al grid. The operating voltage of the device is as low as 4 V, the on/off ratio is higher than one hundred, and the current gain is 10(4). The current density is higher than 1 mA/cm(2). (C) 2007 Elsevier B.V. All rights reserved.

引用

页码：310 / 316

页数：7

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