Effect of SR irradiation on In2O3 film

被引：3

作者：

Hanamoto, K

Hirai, A

Sasaki, M

Kimura, Y

Miyatani, K

Kaito, C

Nakayama, Y

机构：

[1] Ritsumeikan Univ, Dept Phys, Shiga 5258577, Japan

[2] Ctr Ind Res, Shiga 5203004, Japan

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT | 2001年 / 467卷

关键词：

crystallization; irradiation; thin films; In2O3; high-resolution electron microscopy;

D O I：

10.1016/S0168-9002(01)00618-0

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

The effect of SR irradiation on the crystal growth of indium oxide films prepared by electron-beam evaporation have been studied by X-ray diffraction and high-resolution electron microscopy. An as-deposited film showed In2O3 crystallites with a size of 2-10 nm. The crystallites were destroyed by SR irradiation under oxygen flow, SR irradiation without oxygen flow showed the growth of In2O3 crystallites up to 20 nm in size with accompanying deoxidation and indium-particle growth. The as-deposited film was composed of variously oriented particles. Periodic oxygen decomposition of the film preferentially took place on the (0 0 1)-oriented particle. (C) 2001 Elsevier Science B.V. All rights reserved.

引用

页码：1213 / 1216

页数：4

共 4 条

[1]

AKAGI A, 1999, JPN J APPL PHYS, V38, P6848

[2] EVAPORATED SN-DOPED IN2O3 FILMS - BASIC OPTICAL-PROPERTIES AND APPLICATIONS TO ENERGY-EFFICIENT WINDOWS [J].