Demonstration of scaled (≥0.12 μm2) Pb(Zr,Ti)O3 capacitors on W plugs with Al interconnect

被引:42
作者
Summerfelt, SR
Moise, TS
Xing, G
Colombo, L
Sakoda, T
Gilbert, SR
Loke, ALS
Ma, S
Wills, LA
Kavari, R
Hsu, T
Amano, J
Johnson, ST
Vestcyk, DJ
Russell, MW
Bilodeau, SM
van Buskirk, P
机构
[1] Texas Instruments Inc, Silicon Technol Dev, Dallas, TX 75243 USA
[2] Agilent Technol, Agilent Labs, Palo Alto, CA 94304 USA
[3] Adv Technol Mat, Danbury, CT 06810 USA
关键词
D O I
10.1063/1.1423789
中图分类号
O59 [应用物理学];
学科分类号
摘要
The measured switched polarization properties of integrated Pb(Zr,Ti)O-3 (PZT) capacitors arrays have been found to show a small dependence on individual capacitor size in the range from 0.17 and 100 mum(2). These thin (90 nm) PZT capacitors have low voltage switching properties with polarization saturation of <1.8 V with switched polarization for the smallest capacitors (0.17 mum(2)) still larger than 25 muC/cm(2). The capacitor stack consisted of TiAlN hardmask/Ir/IrOx/PZT/Ir/TiAlN on either SiO2 dielectric or W plugs. The capacitor was patterned using 248 nm lithography and etched using only one mask. For wafers without W plugs, the Ir bottom electrode was not etched. For wafers with W plugs, the entire capacitor stack was etched and electrical connection to the bottom electrode was through the W plugs. The capacitors were integrated using SiO2 dielectrics and one level of Al metallization. These data suggest that high-density, ferroelectric capacitor-based memories may be feasible. (C) 2001 American Institute of Physics.
引用
收藏
页码:4004 / 4006
页数:3
相关论文
共 18 条
[1]   Patterning and switching of nanosize ferroelectric memory cells [J].
Alexe, M ;
Harnagea, C ;
Hesse, D ;
Gösele, U .
APPLIED PHYSICS LETTERS, 1999, 75 (12) :1793-1795
[2]   Low-voltage switching characteristics of SrBi2Ta2O9 capacitors [J].
Amanuma, K ;
Kunio, T .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1996, 35 (9B) :5229-5231
[3]   Capacitor-on-Metal/Via-stacked-Plug (CMVP) memory cell for 0.25 μm CMOS embedded FeRAM [J].
Amanuma, K ;
Tatsumi, T ;
Maejima, Y ;
Takahashi, S ;
Hada, H ;
Okizaki, H ;
Kunio, T .
INTERNATIONAL ELECTRON DEVICES MEETING 1998 - TECHNICAL DIGEST, 1998, :363-366
[4]  
Bernacki S., 1993, Integrated Ferroelectrics, V3, P97, DOI 10.1080/10584589308216704
[5]  
Bilodeau SM, 1999, INTEGR FERROELECTR, V26, P821, DOI 10.1080/10584589908215617
[6]  
Celii FG, 1999, INTEGR FERROELECTR, V27, P1271, DOI 10.1080/10584589908228471
[7]   Scaling of ferroelectric properties in thin films [J].
Ganpule, CS ;
Stanishevsky, A ;
Su, Q ;
Aggarwal, S ;
Melngailis, J ;
Williams, E ;
Ramesh, R .
APPLIED PHYSICS LETTERS, 1999, 75 (03) :409-411
[8]   A novel 1T1C capacitor structure for high density FRAM [J].
Jang, NW ;
Song, YJ ;
Kim, HH ;
Jung, DJ ;
Koo, BJ ;
Lee, SY ;
Joe, SH ;
Lee, KM ;
Kim, K .
2000 SYMPOSIUM ON VLSI TECHNOLOGY, DIGEST OF TECHNICAL PAPERS, 2000, :34-35
[9]  
JEON BG, 2000, ISSCC FEB, P272
[10]  
Jones RE, 1997, SOLID STATE TECHNOL, V40, P201