The detailed analysis of high Q CMOS-compatible microwave spiral inductors in silicon technology

被引：56

作者：

Park, M ^{[1
]}

Lee, S

Kim, CS

Yu, HK

Nam, KS

机构：

[1] Elect & Telecommun Res Inst, Microelect Technol Lab, Taejon 305350, South Korea

[2] Hankuk Univ Foreign Studies, Dept Elect Engn, Kyungki Do 449791, South Korea

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1998年 / 45卷 / 09期

关键词：

CMOS; inductor; MMIC's; silicon materials/devices;

D O I：

10.1109/16.711361

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We present the extensive experimental results and their detailed analysis showing the important effects of layout parameters on the frequency responses of quality factor (Q) of rectangular spiral inductors, which are fabricated on a silicon substrate by using conventional silicon CMOS technology, in order to determine the desirable values of layout parameters for designing the high Q inductors used in RF IC's applications. Analysis of the inductors on Si substrates with three kinds of resistivities has been performed by tailoring the geometric layout and varying the metal thickness. Using these results, the substrate effects on RF performance of inductors are also investigated by observing the frequency responses of Q with varying the substrate resistivity in detail.

引用

页码：1953 / 1959

页数：7

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