Characterization of Al(Cr)N and Ga(Cr)N dilute magnetic semiconductors

被引:72
作者
Gu, L [1 ]
Wu, SY
Liu, HX
Singh, RK
Newman, N
Smith, DJ
机构
[1] Arizona State Univ, Ctr Solid State Sci, Tempe, AZ 85287 USA
[2] Arizona State Univ, Dept Chem & Mat Engn, Tempe, AZ 85287 USA
[3] Arizona State Univ, Dept Phys & Astron, Tempe, AZ 85287 USA
关键词
microstructure; MBE; dilute magnetic semiconductor; ferromagnetism;
D O I
10.1016/j.jmmm.2004.11.446
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Thin Al(Cr)N and Ga(Cr)N films with a range of Cr concentrations were grown on 6H-SiC substrates by reactive molecular beam epitaxy at temperatures in the range 700-825 degrees C. Optimized AI(Cr)N and Ga(Cr)N films were found to be ferromagnetic with Curie temperatures above 900 K. Structural characterization by electron microscopy and electron diffraction revealed epilayers with columnar morphology and excellent crystallinity. Further examination ruled out any known secondary ferromagnetic impurities in AI(Cr)N, whereas very small amounts (similar to 0.2%) of antiferromagnetic CrN were detected in the Ga(Cr)N films. Distribution of Cr in the films was analyzed using energy-filtered imaging. (c) 2005 Elsevier B.V. All rights reserved.
引用
收藏
页码:1395 / 1397
页数:3
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