Surface segregation of low-energy ion-induced defects in Si

被引：5

作者：

Bedrossian, PJ ^{[1
]}

de la Rubia, TD ^{[1
]}

机构：

[1] Univ Calif Lawrence Livermore Natl Lab, Livermore, CA 94551 USA

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS | 1998年 / 16卷 / 03期

关键词：

D O I：

10.1116/1.581229

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Surfaces of Si(100) irradiated at 110 K with 5 keV He ions under ultrahigh vacuum conditions and subsequently annealed isochronally display abrupt healing of the radiation-induced surface roughness at 160 K. Smoothening also occurs at 160 K for Si(100)-2 x 1 irradiated with 230 eV Ar ions at 110 K, but not for Si(100) following submonolayer Si deposition at 110 K. The data suggest that the smoothening at 160 K following 5 keV He ion irradiation at 110 K results from surface recombination of point defects which are generated on or below the surface by the irradiation and migrate to the surface at 110 K. (C) 1998 American Vacuum Society. [S0734-2101(98)06303-9].

引用

页码：1043 / 1046

页数：4

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