An aqueous solution-based doping strategy for large-scale synthesis of Sb-doped ZnO nanowires

被引:73
作者
Wang, Fei [1 ,2 ]
Seo, Jung-Hun [3 ]
Bayerl, Dylan [1 ]
Shi, Jian [1 ]
Mi, Hongyi [3 ]
Ma, Zhenqiang [3 ]
Zhao, Deyin [4 ]
Shuai, Yichen [4 ]
Zhou, Weidong [4 ]
Wang, Xudong [1 ]
机构
[1] Univ Wisconsin, Dept Mat Sci & Engn, Madison, WI 53706 USA
[2] Univ Wisconsin, Dept Chem, Madison, WI 53706 USA
[3] Univ Wisconsin, Dept Elect & Comp Engn, Madison, WI 53706 USA
[4] Univ Texas Arlington, Dept Elect Engn, Arlington, TX USA
基金
美国国家科学基金会;
关键词
ZINC-OXIDE; GROWTH; IMPURITY; ARRAYS; NANOSTRUCTURES; NANOCRYSTALS; ELECTRONICS; PHOTONICS;
D O I
10.1088/0957-4484/22/22/225602
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
An aqueous solution-based doping strategy was developed for controlled doping impurity atoms into a ZnO nanowire (NW) lattice. Through this approach, antimony-doped ZnO NWs were successfully synthesized in an aqueous solution containing zinc nitrate and hexamethylenetetramine with antimony acetate as the dopant source. By introducing glycolate ions into the solution, a soluble antimony precursor (antimony glycolate) was formed and a good NW morphology with a controlled antimony doping concentration was successfully achieved. A doping concentration study suggested an antimony glycolate absorption doping mechanism. By fabricating and characterizing NW-based field effect transistors (FETs), stable p-type conductivity was observed. A field effect mobility of 1.2 cm(2) V-1 s(-1) and a carrier concentration of 6 x 10(17) cm(-3) were achieved. Electrostatic force microscopy (EFM) characterization on doped and undoped ZnO NWs further illustrated the shift of the metal-semiconductor barrier due to Sb doping. This work provided an effective large-scale synthesis strategy for doping ZnO NWs in aqueous solution.
引用
收藏
页数:8
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