Study of arsenic doping ZnO thin films grown by metal-organic chemical vapor deposition via x-ray photoelectron spectroscopy

被引:27
作者
Guan, Hesong [1 ]
Xia, Xiaochuan [1 ]
Zhang, Yuantao [1 ]
Gao, Fubin [1 ]
Li, Wancheng [1 ]
Wu, Guoguang [1 ]
Li, Xiangping [1 ]
Du, Guotong [1 ,2 ]
机构
[1] Jilin Univ, Coll Elect Sci & Engn, State Key Lab Integrated Optoelect, Changchun 130012, Peoples R China
[2] Dalian Univ Technol, Dept Phys, State Key Lab Mat Modificat Laser Ion & Elect Bea, Dalian 116023, Peoples R China
关键词
D O I
10.1088/0953-8984/20/29/292202
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
Arsenic-doped ZnO (ZnO:As) films were grown by metal-organic chemical vapor deposition (MOCVD) on GaAs layers, which were deposited on sapphire substrates by sputtering using a GaAs target. The As doping was obtained by thermal diffusion. The ZnO: As films were annealed in nitrogen (ZnO:As:N-2) and oxygen (ZnO:As:O-2) atmosphere, respectively. X-ray photoelectron spectroscopy (XPS) measurements showed that annealing in oxygen facilitated even As doping in ZnO films and the content of As remains around 3.4% after Ar+ bombardment. However, annealing in N-2 leads to the aliquation of As at the surface for ZnO:As films. Core level results show that there are two chemical states of As in ZnO:As:O-2 films including As-Zn-2V(Zn) and As-Zn, while four types exist in ZnO:As:N-2 films including AsZn, As-Zn-2V(Zn), A(Si), and As-O. The contribution centered at around 43.9 eV of the As 3d peak is ascribed to As-Zn-2V(Zn). The valence band maximum (VBM) spectrum taken by ultraviolet photoelectron spectroscopy (UPS) indicates that the Fermi energy of ZnO:As:O-2 films shifts toward the VBM by 0.37 eV compared with undoped ZnO films, which proves As-Zn-2V(Zn) is an acceptor in ZnO:As:O-2 films, but the ZnO:As films still show n- type conductivity, which is possibly due to the compensation of As- related donor and native defects. Detailed analysis of the chemical states of As may help point toward paths for growing high-quality ZnO:As films.
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页数:5
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