Visual-infrared electroluminescence emission from ZnO/GaAs heterojunctions grown by metal-organic chemical vapor deposition

被引：46

作者：

Du, Guotong

Cui, Yongguo ^{[1
]}

Xia, Xiaochuan

Li, Xiangping

Zhu, Huichao

Zhang, Baolin

Zhang, Yuantao

Ma, Yan

机构：

[1] Dalian Univ Technol, Dept Phys, State Key Lab Mat Modificat Laser Ion & Electron, Dalian 116023, Peoples R China

[2] Jilin Univ, Coll Elect Sci & Engn, State Key Lab Integrated Optoelect, Changchun 130012, Peoples R China

来源：

APPLIED PHYSICS LETTERS | 2007年 / 90卷 / 24期

基金：

中国国家自然科学基金;

关键词：

D O I：

10.1063/1.2748093

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The light-emitting diode of p-ZnO/n-GaAs heterojunction was grown by metal-organic chemical vapor deposition. The p-ZnO films have been formed by the doping As atoms which diffuse into ZnO film from GaAs substrate. The p-type behavior of As-doped ZnO films based on As-doped p-ZnO/n-GaAs, p-ZnO/p-GaAs heterojunction was studied by carrying out I-V measurements and x-ray photoelectron spectroscopy. The I-V characteristic of p-ZnO/n-GaAs heterojunction showed characteristic of rectifying diode and visual-infrared electroluminescence emission under forward current injection at room temperature. The I-V of the heterounction had a threshold voltage of similar to 2.5 V. (c) 2007 American Institute of Physics.

引用

页数：3

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