Can Impact Excitation Explain Efficient Carrier Multiplication in Carbon Nanotube Photodiodes?

被引：37

作者：

Baer, Roi ^{[1
]}

Rabani, Eran ^{[2
]}

机构：

[1] Hebrew Univ Jerusalem, Chaim Weizmann Inst Chem, Fritz Haber Ctr Mol Dynam, IL-91904 Jerusalem, Israel

[2] Tel Aviv Univ, Raymond & Beverly Sackler Fac Exact Sci, Sch Chem, IL-69978 Tel Aviv, Israel

来源：

NANO LETTERS | 2010年 / 10卷 / 09期

关键词：

Carbon nanotubes; multiexcitons; diode; impact excitation; photocurrents; MULTIPLE EXCITON GENERATION; QUANTUM DOTS; MULTIEXCITON GENERATION; NANOCRYSTALS; PBSE; PHOTOGENERATION; CONVERSION; LIMIT; CDSE;

D O I：

10.1021/nl100639h

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

We address recent experiments (Science 2009, 325, 1367) reporting on highly efficient multiplication of electron hole pairs in carbon nanotube photodiodes at photon energies near the carrier multiplication threshold (twice the quasi-particle band gap). This result is surprising in light of recent experimental and theoretical work on multiexciton generation in other confined materials, such as semiconducting nanocrystals. We propose a detailed mechanism based on carrier dynamics and impact excitation resulting in highly efficient multiplication of electron hole pairs. We discuss the important time and energy scales of the problem and provide analysis of the role of temperature and the length of the diode.

引用

页码：3277 / 3282

页数：6

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