Extremely high thermal conductivity of graphene: Prospects for thermal management applications in nanoelectronic circuits

被引：1690

作者：

Ghosh, S. ^{[1
]}

Calizo, I. ^{[1
]}

Teweldebrhan, D. ^{[1
]}

Pokatilov, E. P. ^{[1
]}

Nika, D. L. ^{[1
]}

Balandin, A. A.

Bao, W. ^{[2
]}

Miao, F. ^{[2
]}

Lau, C. N. ^{[2
]}

机构：

[1] Univ Calif Riverside, Dept Elect Engn, Nano Device Lab, Riverside, CA 92521 USA

[2] Univ Calif Riverside, Dept Phys & Astron, Riverside, CA 92521 USA

来源：

APPLIED PHYSICS LETTERS | 2008年 / 92卷 / 15期

关键词：

D O I：

10.1063/1.2907977

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The authors reported on investigation of the thermal conductivity of graphene suspended across trenches in Si/SiO2 wafer. The measurements were performed using a noncontact technique based on micro-Raman spectroscopy. The amount of power dissipated in graphene and corresponding temperature rise were determined from the spectral position and integrated intensity of graphene's G mode. The extremely high thermal conductivity in the range of similar to 3080-5150 W/m K and phonon mean free path of similar to 775 nm near room temperature were extracted for a set of graphene flakes. The obtained results suggest graphene's applications as thermal management material in future nanoelectronic circuits. (C) 2008 American Institute of Physics.

引用

页数：3

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