A novel current-scaling a-Si:H TFTs pixel electrode circuit for AM-OLEDs

被引：33

作者：

Lin, YC ^{[1
]}

Shieh, HPD ^{[1
]}

Kanicki, J ^{[1
]}

机构：

[1] Univ Michigan, Dept Elect Engn & Comp Sci, Solid State Elect Lab, Ann Arbor, MI 48109 USA

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2005年 / 52卷 / 06期

关键词：

active-matrix; active-matrix organic light-emitting displays (AM-OLEDs); current driving; current scaling; light-emitting diode (LED); organic light-emitting displays (OLED); polymer light-emitting device (PLED); thin-film transistor;

D O I：

10.1109/TED.2005.848119

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Hydrogenated amorphous silicon thin-film transistor (a-Si:H TFT) pixel electrode circuit with a function of current scaling is proposed for active-matrix organic light-emitting displays (AM-OLEDs). In contrast to the conventional current mirror pixel electrode circuit, in this circuit a high data-to-organic light-emitting device (OLED) current ratio can be achieved, without increasing the a-Si:H TFT size, by using a cascade structure of storage capacitors. Moreover, the proposed circuit can compensate for the variations of TFT threshold voltage. Simulation results, based on a-Si:H TFT and OLED experimental data, showed that a data-to-OLED current ratio larger than 10 and a fast pixel programming time can be accomplished with the proposed circuit.

引用

页码：1123 / 1131

页数：9

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