Oxide-assisted growth and characterization of Ge/SiOx nanocables

Germanium/SiOx nanocables were prepared via simple thermal evaporation of SiO and Ge powders in an alumina tube with Ar premixed with 5%H-2 as the carrier gases. The product was characterized by scanning electron microscopy, transmission electron microscopy (TEM) with energy dispersive x-ray spectroscopy system, and high-resolution TEM. The Ge/SiOx nanocables had diameters in the range of 60-150 nm and lengths of several tens of micrometers. The growth of the Ge/SiOx nanocables was considered to occur via the combination of oxide-assisted growth and vapor-liquid-solid processes, and the composition of the nanocables was determined by the relative supply of the Ge and SiO vapors. (C) 2003 American Institute of Physics.