Nano-structural properties of ZnO films for Si based heterojunction solar cells

被引：28

作者：

Brelvik, T. H.

Diplas, S.

Ulyashin, A. G.

Gunnaes, A. E.

Olaisen, B. R.

Wright, D. N.

Holt, A.

Olsen, A.

机构：

[1] Univ Oslo, Dept Phys, NO-0316 Oslo, Norway

[2] Inst Energy Technol, Sect Renewable Energy, NO-2027 Kjeller, Norway

[3] Univ Oslo, Ctr Mat Sci & Nanotechnol, NO-0318 Oslo, Norway

来源：

THIN SOLID FILMS | 2007年 / 515卷 / 24期

关键词：

ZnO; al-doping; optical properties; AFM; magnetron sputtering; XPS; TEM; a-Si : H crystallization;

D O I：

10.1016/j.tsf.2007.03.095

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Properties and structure of ZnO and ZnO:Al films deposited on c-Si, a-Si:H/Si and glass substrates are studied by various methods. The transmittance of the ZnO:Al was found to be higher when compared to ZnO, and the refractive index lower. X-ray pbotoelectron spectroscopy (XPS) shows that the screening efficiency in the presence of core holes is enhanced in the Al doped ZnO. The roughness of the ZnO:Al surfaces is strongly substrate dependent. With transmission electron microscopy (TEM) a 2-3 nm thick amorphous interfacial layer was observed independently of substrate and doping. Deposition of ZnO on a-SM substrate results in crystallization of the a-Si:H layer independently of Al doping. (c) 2007 Elsevier B.V. All rights reserved.

引用

页码：8479 / 8483

页数：5

共 15 条

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