Epitaxial relationship of ZnO film with Si (001) substrate and its effect on growth and morphology

被引：32

作者：

Liu, Z. W. ^{[1
]}

Sun, C. W. ^{[1
]}

Gu, J. F. ^{[1
]}

Zhang, Q. Y. ^{[1
]}

机构：

[1] Dalian Univ Technol, State Key Lab Mat Modificat Laser Ion & Electron, Dalian 116024, Peoples R China

来源：

APPLIED PHYSICS LETTERS | 2006年 / 88卷 / 25期

基金：

中国国家自然科学基金;

关键词：

D O I：

10.1063/1.2216103

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Using reactive radio-frequency magnetron sputtering, epitaxial growth of ZnO film was observed on Si (001) substrate at different temperatures ranging from room temperature to 750 degrees C. The epitaxial relationship was determined to be ZnO(001)parallel to Si(001) in the direction normal to the surface of the films with a deviated angle less than 3 degrees and ZnO[100]parallel to Si[110] or ZnO[310]parallel to Si[110] in the plan view. Based on (2x1) reconstruction of Si (001), a heteroepitaxial model was suggested to discuss the influence of Si (001) substrate on the growth and morphology of ZnO films at different temperatures. (c) 2006 American Institute of Physics.

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