Liquid He cooled silicon for radiation-hard hybrid superconducting pixel detectors

被引：1

作者：

Palmieri, VG

Borchi, E

Casagrande, L

Da Via, C

Esposito, A

Pagano, S

Pirollo, S

机构：

[1] Univ Bern, Lab Hochenergiephys, CH-3012 Bern, Switzerland

[2] Univ Florence, Dipartimento Energet, I-50139 Florence, Italy

[3] Lab Instrumentacao & Fis Expt Particulas, P-1000 Lisbon, Portugal

[4] Electrotech Lab, Tsukuba, Ibaraki 305, Japan

[5] CNR, Ist Cibernet, I-80072 Arco Felice Napoli, Italy

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT | 1999年 / 426卷 / 01期

关键词：

radiation-hard; silicon; cryogenic; detector;

D O I：

10.1016/S0168-9002(98)01469-7

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

The performance of silicon detectors irradiated with a fluence of 1.2 x 10(14) cm(-2) 1 MeV neutrons and the radiation-induced lattice disorder have been analysed in the low-temperature range down to 4.2 K, The results demonstrate that heavily irradiated silicon detectors could match the exceptional radiation hardness of a Josephson tunnel junction electronics in a hybrid superconducting pixel detector scheme used as an ultra-fast radiation-hard cryogenic tracking device, (C) 1999 Elsevier Science B.V. All rights reserved.

引用

页码：56 / 60

页数：5

共 9 条

[1] STUDIES OF DEEP LEVELS IN HIGH-RESISTIVITY SILICON DETECTORS IRRADIATED BY HIGH FLUENCE FAST-NEUTRONS USING A THERMALLY STIMULATED CURRENT SPECTROMETER [J].