Improved pentacene device characteristics with sol-gel SiO2 dielectric films

The interfacial interactions between semiconductors and gate dielectrics have a profound influence on the device characteristics of field effect transistors (FETs). This paper reports on the concept of introducing a sol-gel SiO2 as inorganic capping layer to significantly improve device characteristics of pentacene-based FETs. The smoother film surfaces of sol-gel SiO2 (1.9 angstrom root-mean-square) induced larger pentacene grain sizes, and led to hole mobilities of 1.43 cm(2)/Vs, on-off ratio of 10(7), and a subthreshold swing of 10(2) mV/decade when operating at -20 V. (c) 2006 Elsevier B.V. All rights reserved.