Electron traps and hysteresis in pentacene-based organic thin-film transistors

被引:278
作者
Gu, G [1 ]
Kane, MG [1 ]
Doty, JE [1 ]
Firester, AH [1 ]
机构
[1] Sarnoff Corp, Princeton, NJ 08543 USA
关键词
D O I
10.1063/1.2146059
中图分类号
O59 [应用物理学];
学科分类号
摘要
In the absence of charge storage or slow polarization in the gate dielectric, the hysteresis in the current-voltage (I-V) characteristics of pentacene-based organic thin-film transistors (OTFTs) is dominated by trapped electrons in the semiconductor. The immobile previously stored negative charge requires extra holes to balance it, resulting in the early establishment of the channel and extra drain current. Inferred from I-V characteristics, this simple electrostatic model qualitatively explains memory effects in pentacene-based OTFTs, and was verified by a time domain measurement.
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页码:1 / 3
页数:3
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