Imaging the charge transport in arrays of CdSe nanocrystals

被引：27

作者：

Drndic, M ^{[1
]}

Markov, R

Jarosz, MV

Bawendi, MG

Kastner, MA

Markovic, N

Tinkham, M

机构：

[1] MIT, Ctr Mat Sci & Engn, Cambridge, MA 02139 USA

[2] Harvard Univ, Dept Phys, Cambridge, MA 02138 USA

来源：

APPLIED PHYSICS LETTERS | 2003年 / 83卷 / 19期

基金：

美国国家科学基金会;

关键词：

D O I：

10.1063/1.1626268

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A method to image charge is used to measure the diffusion coefficient of electrons in films of CdSe nanocrystals at room temperature. This method makes possible the study of charge transport in films exhibiting extremely high resistances or very small diffusion coefficients. (C) 2003 American Institute of Physics.

引用

收藏

页码：4008 / 4010

页数：3

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