Enhanced nucleation and enrichment of strained-alloy quantum dots

被引：127

作者：

Tersoff, J ^{[1
]}

机构：

[1] IBM Corp, Div Res, TJ Watson Res Ctr, Yorktown Hts, NY 10598 USA

来源：

PHYSICAL REVIEW LETTERS | 1998年 / 81卷 / 15期

关键词：

D O I：

10.1103/PhysRevLett.81.3183

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

An epitaxial strained layer is metastable against nucleation of three-dimensional "islands." For an alloy, I show that these islands nucleate at a substantially different composition than the alloy layer. This stress-induced segregation drastically increases the nucleation rate. For planar-layer electronic devices, these effects exacerbate the roughening problem. However, the same effects enhance the promise of "self-assembled quantum dots." Possible "self-capping" of quantum dots is also discussed. [S0031-9007(98)07308-6].

引用

页码：3183 / 3186

页数：4

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