MOLECULAR-BEAM EPITAXIAL-GROWTH MECHANISMS OF (AL,GA)AS ON VICINAL GAAS-SURFACES - SELF-ORGANIZATION AND STEP BUNCHING

被引：23

作者：

KRISHNAMURTHY, M ^{[1
]}

LORKE, A ^{[1
]}

WASSERMEIER, M ^{[1
]}

WILLIAMS, DRM ^{[1
]}

PETROFF, PM ^{[1
]}

机构：

[1] UNIV CALIF SANTA BARBARA,CTR QUANTIZED ELECTR STRUCT,SANTA BARBARA,CA 93106

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1993年 / 11卷 / 04期

关键词：

D O I：

10.1116/1.586945

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The growth mechanisms of (Al,Ga)As lateral superlattices (LSL) on GaAs(100) and GaAs (110) vicinal surfaces were studied using transmission electron microscopy (TEM) and Monte Carlo simulations. In GaAs(100) surfaces, spontaneous formation of a LSL from (AlAs)1(GaAs)1 short period superlattices is explained by a vertical exchange reaction model. This mechanism may be the underlying cause of poor lateral segregation in conventional fractional layer (Al,Ga)As LSL. Growth on vicinal GaAs(110) surfaces leads to periodic faceting. Cross sectional TEM images were compared with simulation of a step-flow model to understand the process of step bunching and the evolution of periodic microfacets.

引用

页码：1384 / 1387

页数：4

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