Wavelength control from 1.25 to 1.4 μm in InxGa1-xAs quantum dot structures grown by metal organic chemical vapor deposition

被引：52

作者：

Passaseo, A

Maruccio, G

De Vittorio, M

Rinaldi, R

Cingolani, R

Lomascolo, M

机构：

[1] Univ Lecce, Dipartimento Ingn Innovaz, INFM, Unita Lecce, I-73100 Lecce, Italy

[2] CNR, IME, Ist Studio Nuovi Mat Elettron, I-73100 Lecce, Italy

来源：

APPLIED PHYSICS LETTERS | 2001年 / 78卷 / 10期

关键词：

D O I：

10.1063/1.1352698

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

This letter reports on the realization of long-wavelength InGaAs quantum dots (QDs) fabricated by metal organic chemical vapor deposition. By controlling the In incorporation in the QD layers and/or in the barrier embedding the QDs, we are able to tune the wavelength emission continuously from 1.25 to 1.4 mum at room temperature. Efficient stacking of dots emitting at 1.3 mum is also demonstrated. (C) 2001 American Institute of Physics.

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页码：1382 / 1384

页数：3

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