Capacitance engineering for InP-based heterostructure barrier varactor

被引：19

作者：

Lheurette, E ^{[1
]}

Melique, X ^{[1
]}

Mounaix, P ^{[1
]}

Mollot, F ^{[1
]}

Vanbesien, O ^{[1
]}

Lippens, D ^{[1
]}

机构：

[1] Univ Sci & Tech Lille Flandres Artois, UMR CNRS 9929, Inst Elect & Microelect Nord, F-59652 Villeneuve Dascq, France

来源：

IEEE ELECTRON DEVICE LETTERS | 1998年 / 19卷 / 09期

关键词：

D O I：

10.1109/55.709634

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We investigate new schemes of M-based heterostructure barrier varactors with the aim of enhancing the capacitance nonlinearity of the devices. Starting from a generic steplike InGaAs/LnAlAs/AlAs single barrier heterostructure, planar-doped and buried InAs quantum-well barrier heterostructures were successfully fabricated. It is shown that both solutions lead to more efficient screening of electric field near equilibrium and hence to improvement in the capacitance-voltage ratios with values as high as similar to 7:1. Under bias, the capacitance modulation is governed by an escaping mechanism in contrast to the conventional depletion operation mode observed for conventional varactors.

引用

页码：338 / 340

页数：3

共 6 条

[1] RESONANT-TUNNELING STRUCTURES WITH LOCAL POTENTIAL PERTURBATIONS [J].