Limit to two-dimensional mobility in modulation-doped GaAs quantum structures: How to achieve a mobility of 100 million

被引：89

作者：

Hwang, E. H. ^{[1
]}

Das Sarma, S. ^{[1
]}

机构：

[1] Univ Maryland, Dept Phys, Condensed Matter Theory Ctr, College Pk, MD 20742 USA

来源：

PHYSICAL REVIEW B | 2008年 / 77卷 / 23期

关键词：

D O I：

10.1103/PhysRevB.77.235437

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Considering scattering by unintentional background charged impurities and by charged dopants in the modulation doping layer as well as by GaAs acoustic phonons, we theoretically consider the practical intrinsic (phonons) and extrinsic (background and dopants) limits to carrier mobility in modulation-doped AlGaAs-GaAs two-dimensional (2D) semiconductor structures. We find that reducing background impurity density to 10(12) cm(-3) along with a modulation doping separation of 1000 A or above will achieve a mobility of 100 x 10(6) cm(2)/V s at a carrier density of 3 x 10(11) cm(-2) for T = 1 K. At T=4(10) K, however, the hard limit to the 2D mobility would be set by acoustic phonon scattering with the maximum intrinsic mobility being no higher than 22(5) x 10(6) cm(2)/V s. Detailed numerical results are presented as a function of carrier density, modulation doping distance, and temperature to provide a quantitative guide to experimental efforts for achieving ultrahigh 2D mobilities.

引用

页数：6

共 25 条

[1] ELECTRONIC-PROPERTIES OF TWO-DIMENSIONAL SYSTEMS [J].

ANDO, T ;

FOWLER, AB ;

STERN, F .

REVIEWS OF MODERN PHYSICS, 1982, 54 (02) :437-672

[2] Activation gaps of fractional quantum Hall effect in the second Landau level [J].

Choi, H. C. ;

Kang, W. ;

Das Sarma, S. ;

Pfeiffer, L. N. ;

West, K. W. .

PHYSICAL REVIEW B, 2008, 77 (08)

[3] Topologically protected qubits from a possible non-Abelian fractional quantum Hall state [J].

Das Sarma, S ;

Freedman, M ;

Nayak, C .

PHYSICAL REVIEW LETTERS, 2005, 94 (16)

[4] Two-dimensional metal-insulator transition as a percolation transition in a high-mobility electron system [J].

Das Sarma, S ;

Lilly, MP ;

Hwang, EH ;

Pfeiffer, LN ;

West, KW ;

Reno, JL .

PHYSICAL REVIEW LETTERS, 2005, 94 (13)

[5] Metallicity and its low-temperature behavior in dilute two-dimensional carrier systems [J].

Das Sarma, S ;

Hwang, EH .

PHYSICAL REVIEW B, 2004, 69 (19) :195305-1

[6] Calculated temperature-dependent resistance in low-density two-dimensional hole gases in GaAs heterostructures [J].

Das Sarma, S ;

Hwang, EH .

PHYSICAL REVIEW B, 2000, 61 (12) :R7838-R7841

[7] Charged impurity-scattering-limited low-temperature resistivity of low-density silicon inversion layers [J].

Das Sarma, S ;

Hwang, EH .

PHYSICAL REVIEW LETTERS, 1999, 83 (01) :164-167

[8] Intrinsic gap of the ν=5/2 fractional quantum Hall state [J].

Dean, C. R. ;

Piot, B. A. ;

Hayden, P. ;

Das Sarma, S. ;

Gervais, G. ;

Pfeiffer, L. N. ;

West, K. W. .

PHYSICAL REVIEW LETTERS, 2008, 100 (14)

[9]

Dolev M, 2008, NATURE, V452, P829, DOI [10.1038/nature06855, 10.1038/natureO6855]

[10] Insulating and fractional quantum Hall states in the first excited Landau level [J].

Eisenstein, JP ;

Cooper, KB ;

Pfeiffer, LN ;

West, KW .

PHYSICAL REVIEW LETTERS, 2002, 88 (07) :768011-768014

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