Carrier concentration, mobility, and electron effective mass in chlorine-doped n-type Zn1-xMnxSe epilayers grown by molecular-beam epitaxy -: art. no. 212103

被引：21

作者：

Daniel, B

Agarwal, KC

Lupaca-Schomber, J

Klingshirn, C

Hetterich, M

机构：

[1] Univ Karlsruhe, Inst Angew Phys, D-76131 Karlsruhe, Germany

[2] Univ Karlsruhe, Ctr Funct Nanostruct, D-76131 Karlsruhe, Germany

来源：

APPLIED PHYSICS LETTERS | 2005年 / 87卷 / 21期

关键词：

D O I：

10.1063/1.2133887

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We investigate n-type chlorine-doped ZnMnSe epilayers with various Mn contents and doping concentrations. In ZnSe, the maximum dopability was 6x10(19) cm(-3), which reduces to 1.1x10(19) cm(-3) at 13% Mn content. At a constant ZnCl2 doping source temperature, the doping concentration decreases continuously with increasing Mn content in the sample. From our optical measurements, we found a lower electron effective mass in Zn0.87Mn0.13Se samples compared to ZnSe. Additionally, the incorporation of Mn increases the resistivity and decreases the mobility of the free charge carriers in the samples. (c) 2005 American Institute of Physics.

引用

页码：1 / 3

页数：3

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